hd zc 55 1 h igh diode semiconductor features i o 3.0a vrrm 150v-20v high surge current capability applications rectifier marking polarity: color band denotes cathode SB3150/sb3200 do-2 7 do-27 plastic-encapsulate diodes schottky rectifier electrical characteristics (t a =25 unless otherwise specified item symbol unit test condition sb3 peak forward voltage v fm v i fm =3.0a peak reverse current i rrm1 ma v rm =v rrm t a =25 0.1 i rrm2 t a =100 10 thermal resistance(typical) r j-a /w between junction and ambient 25 r j-l between junction and lead 8 150 200 0.95 item symbol unit conditions repetitive peak reverse voltage v rrm v average forward current i f(av) a 60hz half-sine wave, resistance 3.0 surge(non-repetitive)forward current i fsm a 60hz half-sine wave,1 cycle, ta=25 80 junction temperature t j storage temperature t stg -55 ~ +150 150 150 200 sb3 200 load, ta= 100 v 105 140 max i mum r m s v rms vo ltage -55 ~ +150 SB3150 thru sb3200
typical characteristics 2 h igh diode semiconductor !"#$%& *+,-./01203456.7 ! fg9:0#%h #i#0*j*klmnmo o pm0!jlq%lr0"ilfm03illm*o sgt,70"yz[6.0\]620"yz.0q]^. _mrm30#.`a1b cgd 9gd cd 9d cdd cd 9d ed fd sd d d gd cgd ! fgc:0!jlq%lr03illm*o00rml%o *f03ilpm j$%& "yz[6.0na]7.0\]620q]^.0fd\}0l.7y7`y^.01/ zb+5`y^.0~1]b0dgtvg$xgg,,&0~.]b0~.z[`a o] ??? cdd d dgs cge cgs 9ge tgd 9g ????? ???????????????????????????????????? ?| ??a???-??a 23?????? ?2 ? ?2 ????? ?? ?| ? ?? 2?2 2?? 2?| 2? ????1? ? ???????????????????????????? ???????3? ?? ?? ? ? a???a????????aa???e?? ??????????? ??? ?? SB3150 sb3200 SB3150 sb3200
3 h igh diode semiconductor do-2 7 unit: in inches (millimeters) min .375(9.50) .335(8.50) .052(1.30) .044(1.10) .220(5.60) .197(5.00) 0.96(24.5) min 0.96(24.5)
4 h igh diode semiconductor ammo box packaging specifications for axial lead rectifiers
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